Full Bridge Mosfet Driver
HIP4081A Full Bridge Mosfet Driver IC SOIC20 MOSFET Driver ICs Datasheet HIP4081A Manufacturer Intersil Driven Configuration Half-Bridge Channel. Features necessary to implement full-bridge topology. Factor, High-Density Power Converters power converters using either current mode. • High-Voltage.
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The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows loads in a tiny space to be driven efficiently. The PWD13F60 accepts a supply voltage (VCC) extending over a wide range and is protected by a low voltage UVLO detection on the supply voltage. The input pin extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The EVALPWD13F60 is 48 x 53 mm wide, FR-4 PCB resulting in an Rth(J-A) of 18 °C/W, capable to drive loads up to 2 ARMS, without forced airflow cooling.
Both controlling and power signals are available on pin strip for easy connection to customer's board. Key Features • Power system-in-package integrating gate drivers and high-voltage power MOSFETs: Low RDS(on) = 320 mΩ, BVDSS = 600V • Suitable for operating as: Full-bridge or Dual independent half-bridges • Wide input supply voltage down to 6.5 VUVLO protection on supply voltage • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Interlocking function to prevent cross conduction • Internal bootstrap diodes.